AP9926GM-HF A-POWER | Alldatasheet

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Technical content

Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 30mΩ ▼ Surface Mount Package ID 6A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice Thermal Data Parameter 201203284 Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Total Power Dissipation 2 Linear Derating Factor 0.016 Continuous Drain Current3,VGS @ 4.5V 4.8 Pulsed Drain Current1 26 Gate-Source Voltage + 12 Continuous Drain Current3,VGS @ 4.5V 6 Parameter Rating Drain-Source Voltage 20 AP9926GM-HF Halogen-Free Product AP9926 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications. SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 30 m Ω VGS=2.5V, ID=4A - - 45 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA - - 1.2 V gfs Forward Transconductance V DS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=6A - 11 17.6 nC Qgs Gate-Source Charge V DS=16V - 1.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.1 - nC td(on) Turn-on Delay Time2 VDS=10V - 4.2 - ns tr Rise Time I D=1A - 9 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 23 - ns tf Fall Time R D=10Ω - 3.5 - ns Ciss Input Capacitance V GS=0V - 570 910 pF Coss Output Capacitance V DS=20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=6A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP9926GM-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP9926GM-HF 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5 V 3.5 V 2.5 V V G =2.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C V G = 2.0 V 5.0V 4.5 V 3.5 V 2.5 V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G = 4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =4A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9926GM-HF Q VG 4.5V QGS QGD QG Charge 01 0 2 0 3 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 0V V DS =1 2V V DS =1 6 V I D =6A 100 1000 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON)