AP9926GEM A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low on-resistance BVDSS 20V ▼ Capable of 2.5V gate drive RDS(ON) 30mΩ ▼ Low drive current ID 6A ▼ Surface mount package

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Continuous Drain Current3 4.8 Pulsed Drain Current1 20 Gate-Source Voltage ±12 Continuous Drain Current3 6 Parameter Rating Drain-Source Voltage 20 Pb Free Plating Product 20112002 AP9926GEM The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 30 mΩ VGS=2.5V, ID=5.2A - - 45 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - - V gfs Forward Transconductance V DS=10V, ID=6A - 15.6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= ±10V - - ±10 uA Qg Total Gate Charge2 ID=6A - 12.5 - nC Qgs Gate-Source Charge V DS=20V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 6.5 - nC td(on) Turn-on Delay Time2 VDS=10V - 5 - ns tr Rise Time I D=1A - 9 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 26.2 - ns tf Fall Time R D=10Ω - 6.8 - ns Ciss Input Capacitance V GS=0V - 355 - pF Coss Output Capacitance V DS=20V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V,VS=1.2V - - 1.67 A VSD Forward On Voltage2 Tj=25℃,IS=1.7A,VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. AP9926GEM

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 23456 V GS (V) RDS(ON) (m I D =6A T C =25 o C 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V GS =2.0V 4.5V 4.0V 3.5V 3.0V 2.5V 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS =4.5V I D =6A 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V GS =2.0V 4.5V 4.0V 3.5V 3.0V 2.5V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9926GEM 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0.5 1.5 2.5 0 30 60 90 120 150 T c , Case Temperature ( o C) PD (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS (V) ID (A) T C =25 o C Single Pulse 1ms 10ms 100ms 10s DC

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =10V V DS =15V V DS =20V I D =6A 100 1000 1 8 15 22 29 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 0 0.4 0.8 1.2 1.6 V SD (V) IS(A) T j =25 o CT j =150 o C

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5 x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA