AP9926EM-A A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low on-resistance BVDSS 16V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 27mΩ ▼ ▼ ▼ ▼ Surface mount package ID 7A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice AP9926EM-A Parameter Rating Drain-Source Voltage 16 Gate-Source Voltage ±12 Continuous Drain Current 3 7 Continuous Drain Current3 5.6 Pulsed Drain Current1 20 Total Power Dissipation 2 Linear Derating Factor 0.016 Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter 201112041 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 G1 SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 16 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.01 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 27 mΩ VGS=2.5V, ID=5A - - 40 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA - - 1.2 V gfs Forward Transconductance V DS=5V, ID=6A - 13 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=16V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=12V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±12V - - ±10 uA Qg Total Gate Charge2 ID=6A - 14 22 nC Qgs Gate-Source Charge V DS=10V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7 - nC td(on) Turn-on Delay Time2 VDS=10V - 10 - ns tr Rise Time I D=1A - 13 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 26 - ns tf Fall Time R D=10Ω -8 - ns Ciss Input Capacitance V GS=0V - 420 670 pF Coss Output Capacitance V DS=16V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 3 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP9926EM-A

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP9926EM-A 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 3.5V 2.5V V G =1.5V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 5.0V 4.5V 3.5V 2.5V V G =1.5V 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =5A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G = 4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9926EM-A Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =6V V DS =8V V DS =1 0 V I D =6A 100 1000 1 4 7 10 13 16 19 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 1ms 10ms 100ms 10s DCT A =25 o C Single Pulse