AP9922GEO-HF

AP9922GEO-HF_16 A-POWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low on-resistance BVDSS 20V ▼ Capable of 1.8V Gate Drive RDS(ON) 16mΩ ▼ Optimal DC/DC Battery Application ID 6.4A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 125 ℃/W Data and specifications subject to change without notice Parameter Operating Junction Temperature Range -55 to 150 Thermal Data Linear Derating Factor 0.01 Storage Temperature Range Drain Current3, VGS @ 4.5V 5.1 Pulsed Drain Current1 30 Total Power Dissipation 1 -55 to 150 AP9922GEO-HF Parameter Rating Drain Current3, VGS @ 4.5V Halogen-Free Product 6.4 201501275 Drain-Source Voltage 20 Gate-Source Voltage + 8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 S2 TSSOP-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 16 m Ω VGS=2.5V, ID=4A - - 22 m Ω VGS=1.8V, ID=3A - - 30 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1 V gfs Forward Transconductance V DS=5V, ID=6A - 6 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge2 ID=6A - 28 45 nC Qgs Gate-Source Charge V DS=16V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=15V - 11 - ns tr Rise Time I D=1A - 14 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 2- ns tf Fall Time V GS=5V - 58 - ns Ciss Input Capacitance V GS=0V - 1630 2600 pF Coss Output Capacitance V DS=20V - 295 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 270 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.84A,VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=6A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9922GEO-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 011223 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 3.5V 2.5V V G =1.8V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 5.0V 4.5V 3.5V 2.5V V G =1.8V T A = 150o C 02468 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =4A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G = 4.5 V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.2 0.4 0.6 0.8 1.0 -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 0V V DS =1 2V V DS =1 6V I D =6A 100 1000 10000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208℃/W t T Single Pulse 0.01 0.02 0.05 0.1 0.2 Duty factor=0.5 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o CV DS =5V Operation in this area limited by RDS(ON)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Package Code meet Rohs requirement for low voltage MOSFET only