AP9916GH

AP9916GH A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low on-resistance BVDSS 18V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 25mΩ ▼ ▼ ▼ ▼ Low drive current ID 35A ▼ ▼ ▼ ▼ Surface mount package

Description

ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.5 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200723011 AP9916GH/J Pb Free Plating Product Parameter Rating Drain-Source Voltage 18 Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V 35 Continuous Drain Current, VGS @ 4.5V 16 Pulsed Drain Current1 90 Total Power Dissipation 50 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.4 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 8 G D S TO-252 G D S G D S TO-251

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 18 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=4.5V, ID=6A - - 25 mΩ VGS=2.5V, ID=5.2A - - 40 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1 V gfs Forward Transconductance V DS=10V, ID=6A - 18 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=18V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125oC) VDS=18V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=18A - 17.5 - nC Qgs Gate-Source Charge V DS=18V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 7.9 - nC td(on) Turn-on Delay Time2 VDS=10V - 7.3 - ns tr Rise Time I D=18A - 98 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 25.6 - ns tf Fall Time R D=0.56Ω -9 8- ns Ciss Input Capacitance V GS=0V - 527 - pF Coss Output Capacitance V DS=18V - 258 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 112 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 35 A ISM Pulsed Source Current ( Body Diode )1 -- 9 0 A VSD Forward On Voltage2 Tj=25℃, IS=35A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9916GH/J ± 8V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics v.s. Junction Temperature 100 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =1.5V V G =2.5V V G =4.5V V G =3.5V 012345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =1.5V V G =2.5V V G =3.5V V G =4.5V 123456 V GS (V) RDSON (m ΩΩΩΩ) I D =6A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =4.5V I D =6A

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature AP9916GH/J 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 0 50 100 150 T c , Case Temperature ( o C) PD (W) 0.1 100 1000 0.1 1 10 100 V DS (V) ID (A) D=0.01 T c =25 o C 10us 1ms 10ms 100ms 100us 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Reverse Diode Junction Temperature 0.2 0.45 0.7 0.95 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0.01 0.1 100 0 0.4 0.8 1.2 1.6 V SD (V) IS (A) T j =25 o C T j =150 o C 100 1000 1 5 9 13 17 21 25 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0 5 10 15 20 25 30 35 40 45 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =15V V DS =18V V DS =10V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA