AP9912H A-POWER | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 20V ▼ Low Gate Charge RDS(ON) 85mΩ ▼ Fast Switching ID 10A

Description

V VGS V ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 6.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200110031 AP9912H/J Parameter Rating Drain-Source Voltage Gate-Source Voltage ± 12 Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.144 Thermal Data Parameter Storage Temperature Range G D S TO-252(H) G D S TO-251(J) G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9912J) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.025 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A mΩ VGS=2.5V, ID=3A 180 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 V gfs Forward Transconductance VDS=5V, ID=5A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=16V ,VGS=0V uA IGSS Gate-Source Leakage VGS= ± 12V ±100 nA Qg Total Gate Charge2 ID=5A 4.3 nC Qgs Gate-Source Charge VDS=16V 0.7 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V 2.2 nC td(on) Turn-on Delay Time2 VDS=16V 3.1 ns tr Rise Time ID=5A 17.1 ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=4.5V 13.9 ns tf Fall Time RD=3.2Ω 2.6 ns Ciss Input Capacitance VGS=0V 135 pF Coss Output Capacitance VDS=20V pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V A ISM Pulsed Source Current ( Body Diode )1 A VSD Forward On Voltage2 Tj=25℃, IS=10A, VGS=0V 1.2 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9912H/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=150 oC 4.5V 4.0V 3.5V 3.0V V GS=2.5V 0.0 1.0 2.0 3.0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=25 oC 4.5V 4.0V 3.5V 3.0V V GS=2.5V 0.2 0.8 1.4 -50 100 150 T j , Junction Temperature ( oC) Normalized RDS(ON) I D=5A V GS=4.5V 150 210 270 V GS (V) RDS(ON) (mΩ Ω Ω I D=5A T C=25 ℃

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9912H/J 0.1 100 0.1 100 V DS (V) ID (A) T C=25 oC Single Pulse 100us 1ms 10ms 100ms 100 125 150 T c , Case Temperature ( oC) ID , Drain Current (A) 100 150 T c , Case Temperature ( oC) PD (W) 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 -50 100 150 T j , Junction Temperature ( oC ) VGS(th) (V) Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D=5A V DS=10V V DS=13V V DS=16V 100 1000 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.1 100 0.2 0.6 1.4 V SD (V) IS(A) Tj=25 oC Tj=150 oC

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS I D I G 1~ 3 mA 0.8 x RATED VDS TO THE OSCILLOSCOPE 4.5 V D G S VDS VGS RG RD