AP98T06GP-HF

AP98T06GP-HF_16 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼ ▼▼ Simple Drive Requirement BV DSS 60V ▼▼ ▼▼ Lower Gate Charge R DS(ON) 5m Ω ▼▼ ▼▼ Fast Switching Characteristic ID 80A ▼▼ ▼▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@T j=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID @T C =25 ℃ A IDM A PD @T C =25 ℃ W EAS Single Pulse Avalanche Energy 4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 6 2 ℃/W Data and specifications subject to change without notice 201501145 AP98T06GP-HF Halogen-Free Product Parameter Rating Drain-Source Voltage 60 Pulsed Drain Current 1 320 Gate-Source Voltage +20 Drain Current, V GS @ 10V 3 Total Power Dissipation 250 -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Storage Temperature Range G D S G D S TO-220(P) AP98T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It providesthe designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.

Electrical Characteristics@T j=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =1mA 60 - - V R DS(ON) Static Drain-Source On-Resistance 2 VGS =10V, I D =40A - - 5 m Ω VGS(th) Gate Threshold Voltage V DS =V GS , I D =250uA 2 - 4 V gfs Forward Transconductance V DS =10V, I D =40A - 82 - S IDSS Drain-Source Leakage Current VDS =48V, V GS =0V - - 25 uA Drain-Source Leakage Current (T j=125 oC) VDS =48V ,V GS =0V - - 250 uA IGSS Gate-Source Leakage V GS = +20V, V DS =0V - - + 100 nA Q g Total Gate Charge I D =30A - 90 150 nC Q gs Gate-Source Charge V DS =48V - 17 - nC Q gd Gate-Drain ("Miller") Charge V GS =10V - 47 - nC td(on) Turn-on Delay Time V DS =30V - 20 - ns tr Rise Time I D =30A - 80 - ns td(off) Turn-off Delay Time R G =3.3 Ω - 40 - ns tf Fall Time V GS =10V - 60 - ns C iss Input Capacitance V GS =0V - 3500 6300 pF C oss Output Capacitance V DS =25V - 1120 - pF C rss Reverse Transfer Capacitance f=1.0MHz - 310 - pF R g Gate Resistance f=1.0MHz - 1.4 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=40A, V GS =0V - - 1.3 V trr Reverse Recovery Time I S=10A, V GS =0V - 75 - ns Q rr Reverse Recovery Charge dI/dt=100A/µs - 170 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 171A. 4.Starting T j=25 oC, V DD =50V, L=0.1mH, R G =25 Ω, I AS =30A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARG E, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED . APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF T HE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DES CRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FUR THER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP98T06GP-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 150 200 250 300 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 25 o C 10 V 8.0 V 7.0 V 6.0 V V G = 5 .0V 120 160 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150 o C 10 V 8.0 V 7.0 V 6.0 V V G = 5.0 V 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized R DS(ON) ID =40A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j=25 o CT j=150 o C 2 4 6 8 10 V GS Gate-to-Source Voltage (V) R DS(ON) (m ΩΩΩΩ) ID =40A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized V GS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) V GS , Gate to Source Voltage (V) V DS =30V V DS =36V V DS =48V ID = 30 A Q V G 10V Q GS Q GD Q G Charge 1000 2000 3000 4000 5000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc ) PDM Duty factor = t/T Peak T j = P DM x R thjc + T C t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf V DS V GS 10% 90% Operation in this area limited by R DS(ON)

for low voltage MOSFET only 98T06GP YWWSSS Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence