AP98T03GP-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Ultra-low On-resistance RDS(ON) 2.8mΩ ▼ Fast Switching Characteristic ID 200A

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.8 ℃/W Rthj-a 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice RoHS-compliant Product Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage + Drain Current, VGS @ 10V3 200 Linear Derating Factor 1.25 Storage Temperature Range Drain Current, VGS @ 10V3 125 Pulsed Drain Current1 800 Total Power Dissipation 156 -55 to 150 Operating Junction Temperature Range -55 to 150 201408255 Thermal Data Parameter G D S AP98T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited fo r high current application due to the low connection resistance. The through-hole version (AP98T03GP) are available for low-profile applications. G D S TO-220(P) G DS TO-263(S)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 2.8 m Ω VGS=4.5V, ID=30A - - 4 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.8 - 2.5 V gfs Forward Transconductance V DS=10V, ID=30A - 75 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=30A - 71 115 nC Qgs Gate-Source Charge V DS=24V - 9 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 41 - nC td(on) Turn-on Delay Time V DS=15V - 14 - ns tr Rise Time I D=30A - 78 - ns td(off) Turn-off Delay Time R G=3.3Ω -7 4- ns tf Fall Time V GS=10V - 136 - ns Ciss Input Capacitance V GS=0V - 4960 7940 pF Coss Output Capacitance V DS=25V - 1210 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 1200 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=40A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=10A, VGS=0V - 54 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 74 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 200A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP98T03GP/S-HF 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP98T03GP/S-HF 100 150 200 250 300 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10 V 7.0 V 5.0 V 4.5 V V G = 3.0 V 120 150 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G = 3.0 V T C =15 0 o C 2.2 2.4 2.6 2.8 3.2 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T C =25 o C 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 20 40 60 80 100 120 140 160 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 5V V DS =1 8V V DS =2 4V I D =3 0A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 2000 4000 6000 8000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC

for low voltage MOSFET only Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 98T03GS YWWSSS

for low voltage MOSFET only98T03GP YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence