AP9578GJ

AP9578GJ A-POWER | Alldatasheet

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Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -10A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 200807172 AP9578GH/J Rating -60 +25 -10 0.23 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Continuous Drain Current, VGS @ 10V -6 Pulsed Drain Current1 -45 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RoHS-compliant Product -55 to 150 Linear Derating Factor -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V G D S G D S TO-252(H) G D S TO-251(J) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9578GJ) is available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.06 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 160 m Ω VGS=-4.5V, ID=-3A - - 200 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5A - 6 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=150oC) VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+25V - - + 100 nA Qg Total Gate Charge2 ID=-5A - 10 16 nC Qgs Gate-Source Charge V DS=-48V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-30V - 10 - ns tr Rise Time I D=-5A - 13 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 34 - ns tf Fall Time R D=6Ω -2 9- ns Ciss Input Capacitance V GS=0V - 760 1220 pF Coss Output Capacitance V DS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-5A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-5A, VGS=0V, - 45 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 107 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 135 145 155 165 175 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 3A T C =25 ℃ 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 5A V G = - 10V 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 02468 1 0 1 2 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V V G = -3.0 V T C =2 5o C 02468 1 0 1 2 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V - 7 .0V -5.0V -4.5V V G = -3.0 V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9578GH/J td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -5A V DS = -48V 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 9578GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement

Package Outline : TO-251 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Millimeters 9578GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement for low voltage MOSFET only