AP9575AGJB A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Higher Gate-Source Voltage BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 64mΩ ▼ Fast Switching Characteristic ID -17A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 201505271 Parameter Rating -60 +30 -17 Halogen-Free Product -11 Thermal Data Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V Drain Current, VGS @ 10V -55 to 150 Pulsed Drain Current1 -60 -55 to 150 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range G D S AP9575A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-251S short lead package is preferred for all commercial- industrial through-hole applications without lead-cutted. TO-251S(JB) GDS

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 64 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-9A - 12 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-12A - 35 56 nC Qgs Gate-Source Charge V DS=-48V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 12 - nC td(on) Turn-on Delay Time V DS=-30V - 12 - ns tr Rise Time I D=-12A - 23 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 5- ns tf Fall Time V GS=-10V - 60 - ns Ciss Input Capacitance V GS=0V - 1440 2300 pF Coss Output Capacitance V DS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-12A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-12A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 75 - nC Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -7.0V -5.0V -4.5V V G =-3.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -7.0V -5.0V -4.5V V G =- 4 .0V 130 170 210 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 9A T C =25 ℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = - 12 A V G =-10V 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 0.0 4.0 8.0 12.0 16.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0.1 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -12A V DS = -48V 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 02468 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o CV DS = -5V Operation in this area limited by RDS(ON)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence meet Rohs requirement for low voltage MOSFET only