AP9575AGH,J-HF A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Higher Gate-Source Voltage BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 64mΩ ▼ Fast Switching Characteristic ID -17A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.5 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice -55 to 150 Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Linear Derating Factor Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V -11 Pulsed Drain Current1 -60 +30 -17 0.29 Halogen-Free Product AP9575AGH/J-HF Rating -60 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 201105313 Thermal Data Parameter G D S G D S TO-251(J) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575AGJ) are available for low-profile applications. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 64 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-9A - 12 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V - - -250 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-12A - 35 56 nC Qgs Gate-Source Charge V DS=-48V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 12 - nC td(on) Turn-on Delay Time2 VDS=-30V - 12 - ns tr Rise Time I D=-12A - 23 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 45 - ns tf Fall Time R D=2.5Ω -6 0- ns Ciss Input Capacitance V GS=0V - 1440 2300 pF Coss Output Capacitance V DS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-12A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-12A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 75 - nC Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -7.0V -5.0V -4.5V V G =-3.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -7.0V -5.0V -4.5V V G =- 4 .0V 130 170 210 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 9A T C =25 ℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = - 12 A V G =-10V 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 0.0 4.0 8.0 12.0 16.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0.1 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -12A V DS = -48V 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 02468 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o CV DS = -5V Operation in this area limited by RDS(ON)