AP9571GP-HF A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 12.5mΩ ▼ Fast Switching Characteristic ID -105A ▼ Halogen Free & RoHS Compliant Product

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG oC TJ oC Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.5 oC/W Rthj-a 62 oC/W Data and specifications subject to change without notice 201206141 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V Operating Junction Temperature Range Storage Temperature Range Pulsed Drain Current1 Thermal Data Parameter -300 -55 to 150 250Total Power Dissipation Total Power Dissipation -55 to 150 Maximum Thermal Resistance, Junction-ambient AP9571GP-HF Rating -60 +20 -105 Halogen-Free Product -67 G D S AP9571 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and lo w package cost contribute to the worldwide popular package. G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 12.5 m Ω VGS=-4.5V, ID=-20A - - 17 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-30A - 60 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-30A - 63 100 nC Qgs Gate-Source Charge V DS=-48V - 11 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 37 - nC td(on) Turn-on Delay Time V DS=-30V - 12.5 - ns tr Rise Time I D=-30A - 54 - ns td(off) Turn-off Delay Time R G=3.3Ω - 125 - ns tf Fall Time V GS=-10V - 140 - ns Ciss Input Capacitance V GS=0V - 6000 9600 pF Coss Output Capacitance V DS=-25V - 940 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 320 - pF Rg Gate Resistance f=1.0MHz - 4.3 8.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-30A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-10A, VGS=0V, - 60 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 90 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -20 A T C =25 o C 160 240 320 0 4 8 12 16 20 24 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -3 0A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) 120 160 200 0 4 8 12 16 20 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -7.0V -6.0V -5.0V V G = -4.0V I D = -1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 0 40 80 120 160 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS = -4 8V I D = -3 0A 2000 4000 6000 8000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 120 160 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A) 100 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -5V