AP9435GK-HF_14 A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -30V ▼ Low Gate Charge RDS(ON) 50mΩ ▼ Fast Switching Characteristic ID -6A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a 45 ℃/W Data and specifications subject to change without notice 1 AP9435GK-HF Rating -30 +20 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -55 to 150 Linear Derating Factor Storage Temperature Range Continuous Drain Current3 -4.8 Pulsed Drain Current1 -20 0.02 201106024 Maximum Thermal Resistance Junction-ambient3 Halogen-Free Product Thermal Data Parameter Total Power Dissipation 2.7 -55 to 150 Operating Junction Temperature Range Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. G D S D D S GSOT-223

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5.3A - - 50 m Ω VGS=-4.5V, ID=-4.2A - - 100 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-4A - 4 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - ±100 nA Qg Total Gate Charge2 ID=-4A - 8 16 nC Qgs Gate-Source Charge V DS=-24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-15V - 6.6 - ns tr Rise Time I D=-1A - 7.7 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-10V - 22 - ns tf Fall Time R D=15Ω - 9.3 - ns Ciss Input Capacitance V GS=0V - 570 912 pF Coss Output Capacitance V DS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.3A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-4A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 120 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED AP9435GK-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -8.0V -6.0V -5.0V V G =-4.0V 01234567 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -8.0V -6.0V -5.0V V G =-4.0V 0.01 0.1 100 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 100 110 3456789 1 0 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5.3A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =-10V I D =-5.3A

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 4 8 12 16 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -4A V DS = -24V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse Rthja = 120℃/W Operation in this area limited by RDS(ON)