AP9435GH A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 50mΩ ▼ Fast Switching ID - 20A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 201017075-1/4 AP9435GH/J Rating - 30 ±20 - 20 0.1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Linear Derating Factor Storage Temperature Range Continuous Drain Current -13 Pulsed Drain Current 1 -60 RoHS-compliant Product Thermal Data Parameter Total Power Dissipation 12.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The TO-252/TO-251 package is widely used for commercial-industrial application. G D S G D S TO-252(H) G D S TO-251(J)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A - - 50 mΩ VGS=-4.5V, ID=-5A - - 90 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-10A - 10 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=± 20V - - ±100 nA Qg Total Gate Charge2 ID=-10A - 8 16 nC Qgs Gate-Source Charge V DS=-24V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4.3 - nC td(on) Turn-on Delay Time2 VDS=-15V - 6.3 - ns tr Rise Time I D=-10A - 46 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 20 - ns tf Fall Time R D=1.5Ω - 7.4 - ns Ciss Input Capacitance V GS=0V - 570 740 pF Coss Output Capacitance V DS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-10A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-10A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP9435GH/J THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C V G =-4.0V -4.5V -10V -8.0V -6.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C V G =-4.0V -4.5V -6.0V -10V -8.0V 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-10A T C =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-10A V G =-10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9435GH/J td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID(A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0 4 8 12 16 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-10A V DS =-24V

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 9435GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement

Original Original Original A 2.10 2.30 2.50 A1 0.60 1.20 1.80 B1 0.40 0.60 0.80 B2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 D 6.00 6.50 7.00 D1 4.80 5.40 5.90 E1 5.00 5.50 6.00 E2 1.20 1.70 2.20 e ---- 2.30 ---- F 7.00 --- 16.70 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 ADVANCED POWER ELECTRONICS CORP. Millimeters SYMBOLS 9435GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement