AP9435GG-HF

AP9435GG-HF A-POWER | Alldatasheet

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Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Fast Switching Characteristic RDS(ON) 50mΩ ▼ Single Drive Requirement ID - 4.2A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice 201010053 AP9435GG-HF Rating - 30 +20 - 4.2 0.01 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V3 Linear Derating Factor Continuous Drain Current, VGS @ 10V3 -3.4 Pulsed Drain Current1 -20 Halogen-Free Product Thermal Data Parameter Total Power Dissipation 1.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range G D S D G D S SOT-89 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A - - 50 m Ω VGS=-4.5V, ID=-2A - - 90 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance2 VDS=-10V, ID=-4A - 4 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-4A - 8 16 nC Qgs Gate-Source Charge V DS=-24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-15V - 6.6 - ns tr Rise Time I D=-1A - 7.7 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 22 - ns tf Fall Time R D=15Ω - 9.3 - ns Ciss Input Capacitance V GS=0V - 570 830 pF Coss Output Capacitance V DS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-4A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 10 - nC Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test 3.Surface mount on FR4 board, t < 10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9435GG-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C V G =-3.0V -10V -7.0V -5.0V -4.5V 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C V G =-3.0V -10V -7.0V -5.0V -4.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 100 120 140 160 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-2A T A =25 ℃ 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 4A V G =-10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Ta Rthja=100oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID(A) 100us 1ms 10ms 100ms 10sT A =25 o C Single Pulse 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 4 A V DS =- 24 V Q VG -4.5V QGS QGD QG Chargetd(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)