AP9435GG A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS -30V ▼ ▼ ▼ ▼ Fast Switching Characteristic RDS(ON) 50mΩ ▼ ▼ ▼ ▼ Single Drive Requirement ID - 4.2A ▼▼▼▼ RoHS Compliant

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 100 ℃/W Data and specifications subject to change without notice 201021051-1/4 AP9435GG Rating - 30 ±20 - 4.2 0.01 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V3 Storage Temperature Range Continuous Drain Current, VGS @ 4.5V3 -3.4 Pulsed Drain Current1 -20 Pb Free Plating Product Thermal Data Parameter Total Power Dissipation 1.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor G D S D G D S SOT-89 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A - - 50 mΩ VGS=-4.5V, ID=-2A - - 90 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance2 VDS=-10V, ID=-4A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=± 20V - - ±100 nA Qg Total Gate Charge2 ID=-4A - 10 16 nC Qgs Gate-Source Charge V DS=-25V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=-15V - 10 - ns tr Rise Time I D=-1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 26 - ns tf Fall Time R D=15Ω -1 4- ns Ciss Input Capacitance V GS=0V - 520 830 pF Coss Output Capacitance V DS=-25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 16 24 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-4A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 24 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mount on FR4 board, t < 10s. AP9435GG

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C V G =-3.0V -10V -7.0V -5.0V -4.5V 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C V G =-3.0V -10V -7.0V -5.0V -4.5V 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 120 160 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =-2A T A =25 ℃℃℃℃ 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 4A V G =-10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9435GG 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Ta Rthja=100oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID(A) 100us 1ms 10ms 100ms 10s T A =25 o C Single Pulse 0 5 10 15 20 25 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 4 A V DS =-2 5 V 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V Q VG -4.5V QGS QGD QG Charge