AP9430AGYT-HF_16 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Small Size & Lower Profile RDS(ON) 4.5mΩ ▼ RoHS Compliant & Halogen-Free ID 21A

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 40 ℃/W Data & specifications subject to change without notice Gate-Source Voltage Parameter Storage Temperature Range Operating Junction Temperature Range Drain Current3, VGS @ 10V Thermal Data Pulsed Drain Current1 Total Power Dissipation Parameter Drain-Source Voltage 3.13 Drain Current3, VGS @ 10V 17 Halogen-Free Product -55 to 150 Rating +12 -55 to 150 201501274 D D D D S S S G PMPAK® 3 x 3 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lo w on-resistance and cost-effectiveness. The PMPAK ® 3 x 3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - 3.9 4.5 m Ω VGS=4.5V, ID=12A - 4.8 5.6 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 60 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=20A - 36 57 nC Qgs Gate-Source Charge V DS=15V - 9 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 19 - nC td(on) Turn-on Delay Time V DS=15V - 14 - ns tr Rise Time I D=1A - 11 - ns td(off) Turn-off Delay Time R G=3.3Ω -6 5- ns tf Fall Time V GS=10V - 26 - ns Ciss Input Capacitance V GS=0V - 3800 6080 pF Coss Output Capacitance V DS=15V - 430 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.6A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 22 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9430AGYT-HF 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V 00011111 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=210oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 05 06 07 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =15V 1000 2000 3000 4000 5000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 120 160 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V 25 50 75 100 125 150 T A , Ambient, Temperature ( o C ) ID , Drain Current (A) T j =-40 o C

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 9430AGYT YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code : YT