AP9412GH A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 6mΩ ▼ Fast Switching Characteristic ID 73A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice 200509072-1/4 Thermal Data Parameter Linear Derating Factor 0.36 Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 Total Power Dissipation Gate-Source Voltage ±20 Continuous Drain Current 73 Continuous Drain Current 52 Pulsed Drain Current 1 250 Parameter Rating Drain-Source Voltage 30 AP9412GH/J 53.6 RoHS-compliant Product G D S TO-252(H) The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9412GJ) are available for low-profile applications. G D S TO-251(J) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 6 mΩ VGS=4.5V, ID=30A - - 8 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance V DS=10V, ID=30A - 30 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=40A - 26 42 nC Qgs Gate-Source Charge V DS=24V - 4.6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 16 - nC td(on) Turn-on Delay Time2 VDS=15V - 10 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 36 - ns tf Fall Time R D=15Ω -2 0- ns Ciss Input Capacitance V GS=0V - 2020 3230 pF Coss Output Capacitance V DS=25V - 450 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 295 - pF Rg Gate Resistance f=1.0MHz - 0.9 1.35 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=40A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=14A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 29 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT AP9412GH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP9412GH/J 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 7 .0V 5.0V 4.5 V V G =3.0V 100 150 200 250 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0 V 5.0V 4.5 V V G = 3.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9412GH/J 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 53 04 56 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =40A V DS =16V V DS =20V V DS =24V 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Charge 100 120 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =175 o CT j =25 o C V DS =5V