AP9410GH-HF

AP9410GH-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 6mΩ ▼ Fast Switching Characteristic ID 75A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a 62.5 ℃/W Data & specifications subject to change without notice AP9410GH-HF 89.2 Halogen-Free Product Parameter Rating Drain-Source Voltage 30 Total Power Dissipation Gate-Source Voltage + 12 Continuous Drain Current, VGS @ 4.5V4 Continuous Drain Current, VGS @ 4.5V 61 Pulsed Drain Current1 300 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 201202153 Total Power Dissipation3 2 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as C/DC converters. G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V VGS=4.5V, ID=20A - - 6 m Ω VGS=2.5V, ID=10A - - 8 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.5 V gfs Forward Transconductance V DS=4V, ID=20A - 70 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=20A - 57 90 nC Qgs Gate-Source Charge V DS=24V - 8 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 24 - nC td(on) Turn-on Delay Time2 VDS=15V - 12 - ns tr Rise Time I D=20A - 52 - ns td(off) Turn-off Delay Time R G=1.8Ω -5 7- ns tf Fall Time V GS=10V - 10 - ns Ciss Input Capacitance V GS=0V - 5400 8640 pF Coss Output Capacitance V DS=25V - 620 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 365 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=20A, VGS=0V, - 39 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 42 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 4.Package limitation current is 75A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9410GH-HF RDS(ON) Static Drain-Source On-Resistance2 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 120 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 5.0V 4.5V 3.5V V G =2.5V 120 160 200 240 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 5.0V 4.5V 3.5V V G = 2.5V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =10A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 2 04 06 08 0 1 0 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =15V V DS =18V V DS =24V 2000 4000 6000 8000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)