AP92T03GS A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Lower On-resistance RDS(ON) 4mΩ ▼ Fast Switching Characteristic ID 80A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a 40 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.71 Pulsed Drain Current1 320 Total Power Dissipation 89 Continuous Drain Current3 80 Continuous Drain Current 50 Rating Drain-Source Voltage 30 Gate-Source Voltage + 20 200901123 AP92T03GS/P RoHS-compliant Product Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Parameter G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GP) are available for low-profile applications. G D S TO-263(S) G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=40A - - 4 m Ω VGS=4.5V, ID=30A - - 5.2 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 2 V gfs VDS=10V, ID=40A - 100 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=40A - 45 72 nC Qgs Gate-Source Charge V DS=20V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 26 - nC td(on) Turn-on Delay Time2 VDS=15V - 12 - ns tr Rise Time I D=40A - 63 - ns td(off) Turn-off Delay Time R G=1Ω,VGS=10V - 40 - ns tf Fall Time R D=0.375Ω -7- ns Ciss Input Capacitance V GS=0V - 3500 5600 pF Coss Output Capacitance V DS=25V - 930 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 770 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=40A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=20A, VGS=0V, - 39 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 42 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP92T03GS/P 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. On-Resistance vs. Reverse Diode Drain Current 120 160 200 240 280 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10 V 7.0 V 5.0 V 4.5 V V G = 3.0 V 120 160 200 240 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G = 3 .0V T C = 150o C 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2.0 3.0 4.0 5.0 6.0 0 2 04 06 08 0 1 0 0 I D , Drain Current (A) RDS(ON) (mΩ) V GS =4.5V V GS =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP92T03GS/P 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 2V V DS =1 6V V DS =2 0V I D =4 0A Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 120 160 200 240 280 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V

Package Outline : TO-220 Millimeters MIN NOM MAX A 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.60 3.10 3.60 L4 14.70 15.50 16.00 L5 6.30 6.50 6.70 φ 3.50 3.70 3.90 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220 SYMBOLS ADVANCED POWER ELECTRONICS CORP. E b e D A c L Package Code Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 92T03GP YWWSSS LOGO φ meet Rohs requirement for low voltage MOSFET only

Package Outline : TO-263 Millimeters MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 D 8.30 8.90 9.40 E 9.70 10.10 10.50 e 2.04 2.54 3.04 L3 4.50 4.90 5.30 θ 0° ----- 5° 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-263 ADVANCED POWER ELECTRONICS CORP. SYMBOLS 5.10(ref) 1.27(ref) 7.40(ref) 6.40(ref) 8.00(ref) 2.54(ref) 1.50 1.50 Part Number b e A θ c YWWSSS LOGO Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Package Code92T03GS E D A θ c meet Rohs requirement for low voltage MOSFET only