AP9120AGH-HF A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -200V ▼ Fast Switching Characteristic RDS(ON) 680mΩ ▼ RoHS Compliant & Halogen-Free ID -8A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W Rthj-a 62.5 ℃/W Data and specifications subject to change without notice -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Total Power Dissipation3 Continuous Drain Current, VGS @ 10V -5 Pulsed Drain Current1 -30 +20 Halogen-Free Product AP9120AGH-HF Rating -200 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 201107121 Thermal Data Parameter G D S G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -200 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A - - 680 m Ω VGS=-4.5V, ID=-2A - - 1000 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5A - 7.8 - S IDSS Drain-Source Leakage Current VDS=-160V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-5A - 39 62 nC Qgs Gate-Source Charge V DS=-160V - 3.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 14.5 - nC td(on) Turn-on Delay Time V DS=-100V - 9 - ns tr Rise Time I D=-5A - 14 - ns td(off) Turn-off Delay Time R G=10Ω -7 0- ns tf Fall Time V GS=-10V - 40 - ns Ciss Input Capacitance V GS=0V - 1100 1760 pF Coss Output Capacitance V DS=-25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Rg Gate Resistance f=1.0MHz - 3.5 7 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-5A, VGS=0V - - -1.5 V trr Reverse Recovery Time I S=-5A, VGS=0V, - 170 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 1.45 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 1 02 03 04 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 0 1 02 03 04 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -8.0V -7.0V -6.0V V G = -5.0V 460 480 500 520 540 560 580 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 2A T C =25 ℃ 0.4 0.9 1.4 1.9 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 4 A V G =-10V 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D =-250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 0.1 100 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -5A V DS = -160V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 02468 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A)