AP88L02S A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS 25V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 5mΩ ▼ ▼ ▼ ▼ Fast Switching ID 88A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 1.3 ℃/W Rthj-amb Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice 200218032 Thermal Data Parameter Pulsed Drain Current1 321 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.77 Storage Temperature Range Total Power Dissipation 96 -55 to 150 Continuous Drain Current, VGS @ 10V 88 Continuous Drain Current, VGS @ 10V 55 Drain-Source Voltage 25 Gate-Source Voltage AP88L02S/P Parameter Rating ± 20 G D S G D S TO-263(S) G D S TO-220(P) The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP88L02P) is available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=40A - - 5 mΩ VGS=4.5V, ID=28A - - 10 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=40A - 45 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=20V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=40A - 50 - nC Qgs Gate-Source Charge V DS=20V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 38 - nC td(on) Turn-on Delay Time2 VDS=15V - 10.5 - ns tr Rise Time I D=25A - 84 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 38 - ns tf Fall Time R D=0.6Ω - 115 - ns Ciss Input Capacitance V GS=0V - 1660 - pF Coss Output Capacitance V DS=25V - 1000 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 400 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.26V - - 88 A ISM Pulsed Source Current ( Body Diode )1 - - 321 A VSD Forward On Voltage2 Tj=25℃, IS=88A, VGS=0V - - 1.26 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP88L02S/P ±100± 20V± 20V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 150 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V V G =6.0V V G =8.0V V G =10V V G =5.0V 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =40A 23456789 1 0 1 1 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =40A T c =25 ℃℃℃℃ 100 150 200 250 300 350 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V V G =5.0V V G =6.0V V G =8.0V V G =10V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 100 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 100 120 0 50 100 150 T c ,Case Temperature ( o C) PD (W) 100 1000 1 10 100 V DS (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms 10us 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.1 100 V SD (V) IS(A) T j =25 o CT j =150 o C 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =40A V DS =20V 100 1000 10000 1 6 11 16 21 26 31 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.6 x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA