AP85T08GS,P A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 80V ▼ Lower On-resistance RDS(ON) 13mΩ ▼ Fast Switching Characteristic ID 75A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy3 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃/W Rthj-a 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 201204033 Maximum Thermal Resistance, Junction-ambient (PCB mount)4 AP85T08GS/P RoHS-compliant Product 450 Parameter Rating Drain-Source Voltage 80 Gate-Source Voltage + Continuous Drain Current, VGS @ 10V 75 Continuous Drain Current, VGS @ 10V 48 Pulsed Drain Current1 260 Total Power Dissipation 138 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 1.11 Thermal Data Parameter Storage Temperature Range G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T08GP) are available for low-profile applications. G D S TO-263(S) G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 80 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 13 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=45A - 70 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=64V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=45A - 63 100 nC Qgs Gate-Source Charge V DS=64V - 23 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 38 - nC td(on) Turn-on Delay Time V DS=40V - 30 - ns tr Rise Time I D=45A - 100 - ns td(off) Turn-off Delay Time R G=10Ω - 144 - ns tf Fall Time V GS=10V - 173 - ns Ciss Input Capacitance V GS=0V - 6300 10080 pF Coss Output Capacitance V DS=25V - 670 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 350 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=20A, VGS=0V - 47 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 86 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting T j=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP85T08GS/P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 150 200 250 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C V G =3.0V 10V 7.0 V 5.0V 4.5V 120 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C V G =3.0V 10V 7.0 V 5.0V 4.5V 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =45A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 120 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0 2 04 06 08 0 1 0 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =40V V DS =5 0V V DS =6 4V I D =4 5A Operation in this area limited by RDS(ON)