AP85T03GH-HF_16 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 6mΩ ▼ Fast Switching Characteristic ID 75A ▼ RoHS Compliant

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice Parameter Rating Halogen-Free Product Drain-Source Voltage 30 Gate-Source Voltage + 20 Drain Current, VGS @ 10V 75 Drain Current, VGS @ 10V 55 Pulsed Drain Current1 350 -55 to 175 Linear Derating Factor 0.7 Storage Temperature Range Total Power Dissipation 107 -55 to 175 201501056 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Operating Junction Temperature Range G D S TO-251(J) G D S TO-252(H) G D S AP85T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP85T03GJ) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 6 m Ω VGS=4.5V, ID=30A - - 10 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 55 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=24V, VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=30A - 33 52 nC Qgs Gate-Source Charge V DS=24V - 8 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 24 nC Qoss Output Charge V DD=15V,VGS=0V - 24.5 39 nC td(on) Turn-on Delay Time2 VDS=15V - 11 - ns tr Rise Time I D=30A - 77 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 5- ns tf Fall Time V GS=10V - 67 - ns Ciss Input Capacitance V GS=0V - 2700 4200 pF Coss Output Capacitance V DS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=30A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board AP85T03GH/J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T c =25 ℃ 0.4 0.8 1.2 1.6 2.4 -50 0 50 100 150 200 T j ,Junction Temperature ( o C) VGS(th) (V) 100 150 200 250 300 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V 4.5V 10V 7.0V 6.0V 100 150 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G =4.0V 4.5V 10V 7.0V 6.0V T C = 175o C 0.5 1.0 1.5 2.0 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =45A V G =10V V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =175 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 6 11 16 21 26 31 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 05 06 07 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =30A 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC

for low voltage MOSFET only85T03GJ YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 85T03GH YWWSSS meet Rohs requirement for low voltage MOSFET only