AP85T03GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 6mΩ ▼ Fast Switching ID 75A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice AP85T03GH/J Parameter Rating RoHS-compliant Product Drain-Source Voltage 30 Gate-Source Voltage + 20 Continuous Drain Current, VGS @ 10V 75 Continuous Drain Current, VGS @ 10V 55 Pulsed Drain Current1 350 Operating Junction Temperature Range -55 to 175 Linear Derating Factor 0.7 Storage Temperature Range Total Power Dissipation 107 -55 to 175 200810235 Thermal Data Parameter The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications. G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 6 m Ω VGS=4.5V, ID=30A - - 10 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 55 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175oC) VDS=24V, VGS=0V - - 500 uA IGSS Gate-Source Leakage V GS=+20V - - + 100 nA Qg Total Gate Charge2 ID=30A - 33 52 nC Qgs Gate-Source Charge V DS=24V - 8 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 24 nC Qoss Output Charge V DD=15V,VGS=0V - 24.5 39 nC td(on) Turn-on Delay Time2 VDS=15V - 11 - ns tr Rise Time I D=30A - 77 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 35 - ns tf Fall Time R D=0.5Ω -6 7- ns Ciss Input Capacitance V GS=0V - 2700 4200 pF Coss Output Capacitance V DS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=30A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP85T03GH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T c =25 ℃ 0.4 0.8 1.2 1.6 2.4 -50 25 100 175 T j ,Junction Temperature ( o C) VGS(th) (V) 100 150 200 250 300 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V 4.5V 10V 7.0V 6.0V 100 150 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G =4.0V 4.5V 10V 7.0V 6.0V T C = 175o C 0.5 1.0 1.5 2.0 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =45A V G =10V V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =175 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 6 11 16 21 26 31 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 05 06 07 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =30A 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 Laser Marking SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code85T03GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO Meet Rohs requirement for low voltage MOSFET only

Package Outline : TO-251 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Millimeters 85T03GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product LOGO meet Rohs requirement for low voltage MOSFET only