AP83T03AGMT-HF_16 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ SO-8 Compatible with Heatsink RDS(ON) 6mΩ ▼ Low On-resistance ID 71A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data and specifications subject to change without notice 201412183 Rating Halogen-Free Product +20 23.2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 Drain Current (Chip), VGS @ 10V 71 -55 to 150 Drain Current, VGS @ 10V3 18.6 Pulsed Drain Current1 200 Total Power Dissipation 50 -55 to 150 Thermal Data Parameter Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. G D S S S S G PMPAK® 5x6 D D D D

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 6 m Ω VGS=4.5V, ID=20A - - 9 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 55 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=20A - 10 16 nC Qgs Gate-Source Charge V DS=15V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5 - nC td(on) Turn-on Delay Time V DS=15V - 10 - ns tr Rise Time I D=1A - 10 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 6- ns tf Fall Time V GS=10V - 12 - ns Ciss Input Capacitance V GS=0V - 1050 1680 pF Coss Output Capacitance V DS=15V - 360 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 1.5 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 60oC/W at steady state. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , IAS=30A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP83T03AGMT-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 048 1 2 1 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T C =25 o C 100 120 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 0A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2 0A V DS =15V 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) T j = -40 o C

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 83T03AGMT YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code : MT