AP80SL400AP A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 800V ▼ Fast Switching Characteristic RDS(ON) 0.4Ω ▼ Simple Drive Requirement ID 3 12A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V3 A ID@TC=100℃ Drain Current, VGS @ 10V3 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …640V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy4 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.82 ℃/W Rthj-a 62 ℃/W Data & specifications subject to change without notice 108 152 201605161 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient 7.6 Halogen-Free Product 800 Parameter Rating +20 G D S AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and lo w package cost contribute to the worldwide popular package. G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 800 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 0.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=10V, ID=5A - 14 - S IDSS Drain-Source Leakage Current VDS=640V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=11A - 56 90 nC Qgs Gate-Source Charge V DS=640V - 16 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 21 - nC td(on) Turn-on Delay Time V DD=400V - 23 - ns tr Rise Time I D=5A - 23 - ns td(off) Turn-off Delay Time R G=7.5Ω -7 0- ns tf Fall Time V GS=10V - 18 - ns Ciss Input Capacitance V GS=0V - 2300 3680 pF Coss Output Capacitance V DS=100V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Rg Gate Resistance f=1.0MHz - 4.3 8.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=5A, VGS=0V - 0.8 - V trr Reverse Recovery Time I S=10A, VGS=0V - 350 - ns Qrr Reverse Recovery Charge dI/dt=50A/µs - 3.1 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 5.I SD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω AP80SL400AP

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =5A V G =10V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V V G =6.0V V SD (V) IS (A) T j = 150 o CT j = 25 o C 0.5 1.5 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 340 360 380 400 420 440 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T C =25 o C

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.1 100 1000 10000 0 200 400 600 800 1000 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =11A V DS =640V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge

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