AP80N30W A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 300V ▼ Lower On-resistance RDS(ON) 66mΩ ▼ High Speed Switching ID 88A

Description

ID@TC=25℃ A IDM A IDR A IDR(PULSE) A PD@TC=25℃ W IAR Avalanche Current3 A EAR Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.833 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W Data and specifications subject to change without notice 200805132 RoHS-compliant Product Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current1 270 Parameter Drain-Source Voltage Pulsed Drain Current1 AP80N30W Rating 300 270 Gate-Source Voltage ±30 Drain Current, V GS @ 10V 88 Total Power Dissipation 150 -55 to 150 Operating Junction Temperature 150 Thermal Data Parameter Storage Temperature Range G D S G D S TO-3P AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=10mA 300 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 66 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 3 - 4.5 V gfs Forward Transconductance V DS=10V, ID=40A - 38 - S Drain-Source Leakage Current VDS=300V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=300V, VGS=0V - - 200 uA IGSS Gate-Source Leakage V GS= ±30V, VDS=0V - - ±0.1 uA Qg Total Gate Charge2 ID=80A - 113 180 nC Qgs Gate-Source Charge V DS=240V - 31 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 44 - nC td(on) Turn-on Delay Time2 VDS=150V - 40 - ns tr Rise Time I D=40A - 130 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 150 - ns tf Fall Time R D=3.75Ω - 115 - ns Ciss Input Capacitance V GS=0V - 5700 9120 pF Coss Output Capacitance V DS=30V - 525 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=80A, VGS=0V - - 1.5 V trr Reverse Recovery Time2 IS=12A, VGS=0V - 310 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.5 - µC Notes: 1.PW ≦ 10 µs, duty cycle ≦ 1%. 2.Pulse test 3.STch = 25℃，Tch ≦ 150℃ THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP80N30W IDSS

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 456789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m T C =25 o C I D =40A 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V 100 120 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =5.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V V G =5.0V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th)(V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP80N30W 0 40 80 120 160 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS = 240 V I D =80A Q VG 10V QGS QGD QG Charge 2000 4000 6000 8000 1 6 11 16 21 26 31 36 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90%

Package Outline : TO-3P Millimeters MIN NOM MAX A 4.50 4.80 5.10 b 0.90 1.00 1.30 b1 1.80 2.50 3.20 b2 1.30 -- 2.30 c 0.40 0.60 0.90 c1 1.40 -- 2.20 D 19.70 20.00 20.30 D1 14.70 15.00 15.30 E 15.30 -- 16.10 b2 e 4.45 5.45 6.45 L 17.50 -- 20.50 φ 3.00 3.20 3.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-3P SYMBOLS ADVANCED POWER ELECTRONICS CORP. Package Part Number 80N30W YWWSSS LOGO E b c L A φ D e Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence