AP80N03GP-HF

AP80N03GS-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 8mΩ ▼ Simple Drive Requirement ID 80A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.5 ℃/W Rthj-a 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice 201408263 Parameter Storage Temperature Range Thermal Data Total Power Dissipation 83.3 -55 to 150 Operating Junction Temperature Range -55 to 150 Drain Current, VGS @ 10V 50 Pulsed Drain Current1 315 Gate-Source Voltage + 20 Drain Current, VGS @ 10V 80 Parameter Rating Drain-Source Voltage 30 Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount)3 AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP80N03P) are available for low-profile applications. G D S TO-220(P) G D S G D S TO-263(S)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=40A - 6 8 m Ω VGS=4.5V, ID=32A - 9 12 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=40A - 50 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=40A - 42 - nC Qgs Gate-Source Charge V DS=24V - 5.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 26 - nC td(on) Turn-on Delay Time V DS=15V - 9.9 - ns tr Rise Time I D=40A - 100 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 7- ns tf Fall Time V GS=10V - 60 - ns Ciss Input Capacitance V GS=0V - 1950 - pF Coss Output Capacitance V DS=25V - 895 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 315 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 80 A ISM Pulsed Source Current ( Body Diode )1 - - 315 A VSD Forward On Voltage2 Tj=25℃, IS=80A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP80N03GS/P-HF 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3456789 1 0 1 1 V GS (V) RDS(ON) (m I D =40A T C =25 o C 100 150 200 250 300 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G = 2.5 V V G =4.5V V G =6.0V V G =8.0V V G =10V 100 150 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G = 2.5 V V G =4.5V V G =6.0V V G =8.0V V G =10V 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =40A

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 100 0 50 100 150 T c ,Case Temperature ( o C) PD (W) 100 1000 0.1 1 10 100 V DS (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 100 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) 0.01 0.1 100 V SD (V) IS (A) T j =25 o CT j =150 o C 100 1000 10000 1 5 9 13 17 21 25 29 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =16V V DS =20V V DS =24V I D =40A

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA

for low voltage MOSFET only Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 80N03GS YWWSSS Part Number Package Code meet Rohs requirement for low voltage MOSFET only80N03GP YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence