AP8012H

AP8012H CHIPOWN | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 10

Technical content

Features

■ Integrated 800V avalanche-rugged power MOSFET ■ 85V to 265V wide range AC voltage input ■ Semi enclosed steady output power 6W(DIP-8)@85~265VAC ■ Frequency modulation for low EMI ■ Burst-mode Operation ■ Built-in Soft Start ■ Internal HV Start-up Circuit ■ Excellent Protection :  Over Current Protection (OCP)  Over Temperature Protection (OTP)  VDD over-voltage protection (OVP)

Applications

■ Electromagnetic Oven power supplies ■ Small household applicatio n power supplies (Coffee machine, Electric kettle, etc.) Package/Order Information Order codes Package AP8012HNEC-T1E DIP-8 AP8012HNEC-T1L DIP-8 AP8012HSEC-R1 SOP-8 Typical Application GND COMP SnubberAC 85~265V DC Output FB Block Control Block OTP Block HV Start Block PWM Switch &Gate Driver SUPPLY &UVLO VDD SW AP8012H

Table 1. Pin Definitions control loop and achieve the regulation. 4 4 VDD Positive Supply voltage Input. Table 2. Typical power

1. Maximum output power in a semi enclosed design measured at 75°C ambient temperature, Duration:2 hours
2. Peak power in a semi enclosed design measured at 75°C ambient temperature, Duration:1 min

Note: 1. Enterprise internal standards, for reference only.

13/F, Building C, Wangzhuang Technology Innovation Center, Longshan Road,New District, Wuxi Tel: +86(510)85217718 http://www.chipown.com Rev.A 1801 3 / 10

Electrical Characteristics

(T J =25°C, VDD = 15 V; unless otherwise specified) Table 3. Power section Table 4. Control section

Figure 1. Flyback application (basic)

13/F, Building C, Wangzhuang Technology Innovation Center, Longshan Road,New District, Wuxi Tel: +86(510)85217718 http://www.chipown.com Rev.A 1801 5 / 10 Typical Characteristics Plots -50 -25 0 25 50 75 100 125 150 50RDS( on ) (Ω) Junction Temperture( )℃ -50 -25 0 25 50 75 100 125 150 750 800 850 900 950BVDSS (V) Junction Temperture( )℃ (a) RDS(on) vs Tj ( b ) B VDSS vs Tj -50 -25 0 25 50 75 100 125 150 13.0 13.5 14.0 14.5 15.0 15.5 16.0VSTART (V) Junction Temperture( )℃ -50 -25 0 25 50 75 100 125 150 7.0 7.5 8.0 8.5 9.0VSTOP (V) Junction Temperture( )℃ (c) VSTART vs Tj ( d ) V STOP vs Tj -50 -25 0 25 50 75 100 125 150 43VOVP (V) Junction Temperture( )℃ -50 -25 0 25 50 75 100 125 150 50FOSC (kHz) Junction Temperture( )℃ (e) VOVP vs Tj (f) F OSC vs Tj

13/F, Building C, Wangzhuang Technology Innovation Center, Longshan Road,New District, Wuxi Tel: +86(510)85217718 http://www.chipown.com Rev.A 1801 6 / 10 Functional Description 1. Startup This device includes a high voltage start up current source connected on the SW of the device. As soon as a voltage is applied on the input of the converter, this start up current source is activated and to charge the VDD capacitor as long as VDD is lower than VSTART. When reaching VSTART, the start up current source is cut off and VDD is sourced by auxiliary side. As VDD falls below VSTOP, the HV-Start circuit won’t work immediately until VDD is lower than VRST. Fig 2. Startup circuit 2. Soft-start up In the process of start up, the current of drain increases to maximum limitation step by step. As a result, it can reduce the stress of secondary diode greatly and help to prevent the transformer turning into the saturation states. Typically, the duration of soft-start is 10 ms. 3. Gate driver The internal power MOSFET in AP8012H is driven by a dedicated gate driver for power switch control. Too weak the gate driver strength results in higher conduction and switch loss of MOSFET while too strong gate drive results in worse EMI. A good tradeoff is achieved through the built-in totem pole gate design with proper output strength and dead time. The good EMI system design and low idle loss is easier to achieve with this dedicated control scheme. 4. Oscillator The switching frequency of AP8012H is internally fixed at 45 kHz. No external frequency setting components are required for PCB design. The frequency modulation is implemented in AP8012H. So that, it minimizes the conduction band EMI and therefore eases the system design because the tone energy could be spread out. 5. Feed-back A feedback pin controls the operation of the device. Unlike conventional PWM control circuits which use a voltage input, the COMP pin is sensitive to cu rrent. Figure 3 presents the internal current mode structure. The Power MOSFET delivers a sense current which is proportional to the main current. R2 receives this current and the current coming from the COMP pin. The voltage across R2 (VR2) is then compared to a fixed reference voltage. The MOSFET is switched off when VR2 equals the reference voltage.

13/F, Building C, Wangzhuang Technology Innovation Center, Longshan Road,New District, Wuxi Tel: +86(510)85217718 http://www.chipown.com Rev.A 1801 7 / 10 Fig 3. Feedback circuit 6. Leading Edge Blanking (LEB) At the instant the internal Sense FET is turned on, there usually exists a high current spike through the Sense FET, caused by the primary side capacitance and secondary side rectifier diode reverse recovery. Excessive voltage across the sense resistor would lead to false feedback ope ration in the current mode PWM control. To counter this effect, the device employs a leading edge blanking (LEB) ci rcuit. This circuit inhibits the PWM comparator for a short time (typically 350ns) after the Sense FET is turned on. 7. Under Voltage Lock Out Once fault condition occurs, switching is terminated and the Sense FET remains off. This causes VDD to fall. When VDD reaches the VDD reset voltage, 6V , the protection is reset and the internal high voltage current source charges the VDD capacitor. When VDD reaches the UVLO start voltage, 14.5V , the device resumes its normal operation. In this manner, the auto-restart can alternately enable and disable the switching of the power Sense FET until the fault condition is eliminated. 8. Thermal Shutdown (TSD) The Sense FET and the control IC are integrated in the same chip, making it easier for the control IC to detect the temperature of the Sense FET. When the temperature exceeds approximately 170°C, thermal shutdown is activated, the device turn off the Sense FET. The device will go back to work when the lower threshold temperature about 140°C is reached.

Table 5. DIP-8 mechanical data Figure 4. Package dimensions

Table 6. SOP-8 mechanical data Figure 5. Package dimensions

13/F, Building C, Wangzhuang Technology Innovation Center, Longshan Road,New District, Wuxi Tel: +86(510)85217718 http://www.chipown.com Rev.A 1801 10 / 10 Important Notice Wuxi Chipown Microelectronics Co. Ltd. reserves the right to make changes without further notice to any products or specifications herein. Wuxi Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does Wuxi Chipown Microelectronics Co. Ltd assume any liability arising out of the application or use of any its products or circuits. Wuxi Chipown Microelectronics Co. Ltd does not convey any license under its patent rights or other rights nor the rights of others.