AP75T10AGP A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 105V ▼ Low On-resistance RDS(ON) 15mΩ ▼ Fast Switching Characteristic ID 65A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 0.9 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200817071-1/4 AP75T10AGP RoHS-compliant Product Parameter Rating Drain-Source Voltage 105 Gate-Source Voltage ±20 Continuous Drain Current, VGS @ 10V 65 Continuous Drain Current, VGS @ 10V 41 Pulsed Drain Current1 260 Total Power Dissipation 138 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 1.11 Thermal Data Parameter Storage Temperature Range G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial- industrial through hole applications and suited for low voltage applications such as DC/DC converters. GD S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 105 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 15 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 29.3 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=100V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=80V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS= ±20V - - ±100 nA Qg Total Gate Charge2 ID=30A - 63 101 nC Qgs Gate-Source Charge V DS=80V - 9 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 30 - nC td(on) Turn-on Delay Time2 VDS=50V - 18 - ns tr Rise Time I D=30A - 74 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 65 - ns tf Fall Time R D=1.6Ω - 104 - ns Ciss Input Capacitance V GS=0V - 2800 4480 pF Coss Output Capacitance V DS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 250 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=30A, VGS=0V - 72 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 180 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP75T10AGP THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 150 200 250 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 7.0 V 5.0V 4.5V V G = 4 .0V 100 120 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G = 4 .0V T C = 150o C 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =16A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP75T10AGP 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =5 0V V DS =6 4V V DS =8 0V I D =3 0A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC

Package Outline : TO-220 Millimeters MIN NOM MAX A 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.6 3.10 3.6 L4 14.70 15.50 16 L5 6.30 6.50 6.70 φ 3.50 3.60 3.70 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220 SYMBOLS ADVANCED POWER ELECTRONICS CORP. E b e D A c L Package Code Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 75T10AGP YWWSSS LOGO φ meet Rohs requirement