AP75N07AGP A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 75V ▼ Simple Drive Requirement RDS(ON) 11mΩ ▼ Fast Switching Characteristic ID 80A

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V4 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice -55 to 175 300 Single Pulse Avalanche Energy3 Storage Temperature Range 320 -55 to 175 Rating +30 200902093 AP75N07AGP RoHS-compliant Product 450 Parameter Parameter G D S G DS TO-220(P) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 75 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 11 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=15V, ID=40A - 78 - S IDSS Drain-Source Leakage Current VDS=75V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=60V, VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=40A - 100 160 nC Qgs Gate-Source Charge V DS=60V - 13 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 47 - nC td(on) Turn-on Delay Time2 VDD=40V - 15 - ns tr Rise Time I D=30A - 83 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 67 - ns tf Fall Time R D=1.33Ω -8 6- ns Ciss Input Capacitance V GS=0V - 3220 5150 pF Coss Output Capacitance V DS=25V - 650 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 220 - pF Rg Gate Resistance f=1.0MHz - 3.3 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 Tj=25℃, IS=40A, VGS=0V - - 1.5 V trr Reverse Recovery Time2 IS=40A, VGS=0V - 80 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 235 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A. 4.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 108A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP75N07AGP

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP75N07AGP 120 160 200 240 280 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C V G = 5 .0V 10V 9. 0V 8 .0V 7.0 V 120 160 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 175o C V G = 5 .0V 10V 9. 0V 8 .0V 7.0 V 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =40A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP75N07AGP Q VG 10V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 120 160 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =25 o C V DS =5V 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =6 0V I D =40A 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 DUTY=0.5 SINGLE PULSE 0.2 T j =175 o C