AP730P A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Dynamic dv/dt Rating BVDSS 400V ▼ ▼ ▼ ▼ Repetitive Avalanche Rated RDS(ON) 1.0Ω ▼ ▼ ▼ ▼ Fast Switching ID 5.5A ▼ ▼ ▼ ▼ Simple Drive Requirement

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.7 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice AP730P Parameter Rating 400 5.5 3.5 Linear Derating Factor 0.59 260 5.5 Storage Temperature Range -55 to 150 200219032 -55 to 150 Parameter The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC- AC converters and high current high speed switching circuits. ± 30 G D S TO-220 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 400 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.36 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=2.75A - - 1 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2.75A - 30 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=400V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=320V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge3 ID=5.5A - 35 - nC Qgs Gate-Source Charge V DS=320V - 3.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 20 - nC td(on) Turn-on Delay Time3 VDD=200V - 8 - ns tr Rise Time I D=5.5A - 20 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 47 - ns tf Fall Time R D=36Ω -1 8- ns Ciss Input Capacitance V GS=0V - 565 - pF Coss Output Capacitance V DS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 38 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 5.5 A ISM Pulsed Source Current ( Body Diode )1 -- 2 3 A VSD Forward On Voltage3 Tj=25℃, IS=5.5A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting T j=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=5.5A. 3.Pulse width <300us , duty cycle <2%. AP730P ±100± 30V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized BVDSS (V) 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =7.0V V G =6.0V V G =5.0V V G =4.0V V G =10V 02468 1 0 1 2 1 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =7.0V V G =6.0V V G =5.0V V G =4.0V V G =10V 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =2.75A

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP730P 25 50 75 100 125 150 T c , Case Temperature ( o C ) ID , Drain Current (A) 0 50 100 150 T c , Case Temperature ( o C ) PD (W) 100 1 10 100 1000 10000 V DS (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 1.6 2.1 2.6 3.1 3.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 100 10000 11 1 2 1 3 1 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 V SD (V) IS (A) T j = 25 o C T j = 150 o C 0 5 10 15 20 25 30 35 40 45 50 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5.5A V DS =80V V DS =120V V DS =160V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA