AP72T02GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 25V ▼ Low On-resistance RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID 62A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy3 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 200807177 Thermal Data Storage Temperature Range Total Power Dissipation 60 -55 to 175 Operating Junction Temperature Range -55 to 175 Linear Derating Factor 0.4 Continuous Drain Current, V GS @ 10V 44 Pulsed Drain Current1 190 Gate-Source Voltage ± 20 Continuous Drain Current, VGS @ 10V 62 Parameter Rating Drain-Source Voltage 25 AP72T02GH/J RoHS-compliant Product Maximum Thermal Resistance, Junction-ambient (PCB mount)4 G D S TO-252(H) G D S TO-251(J) G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - 8 9 m Ω VGS=4.5V, ID=15A - 11 15 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 42 - S IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175oC) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= ±20V - - ±100 nA Qg Total Gate Charge2 ID=30A - 13 21 nC Qgs Gate-Source Charge V DS=20V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time I D=30A - 80 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 22 - ns tf Fall Time R D=0.5Ω -6- ns Ciss Input Capacitance V GS=0V - 930 1490 pF Coss Output Capacitance V DS=25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=15A, VGS=0V, - 26 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP72T02GH/J 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 7.0V 5.0V 4.5V V G =3.0V 120 180 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V 0.6 1.4 1.8 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.0 0.6 1.2 1.8 -50 0 50 100 150 200 T j , Junction Temperature ( o C ) Normalized VGS(th) (V) 2468 1 0 VGS , Gate-to-Source Voltage (V) RDS(ON) (m I D =15A T C =25 ℃

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain-Source On Resistance AP72T02GH/J 01 0 2 0 3 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 0V V DS =1 5V V DS =2 0V I D =3 0A 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 120 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =175 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 2 04 06 08 0 1 0 0 I D (A) RDS(ON) (m 10V 4.5V

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 72T02GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement

Package Outline : TO-251 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Millimeters 72T02GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement for low voltage MOSFET only