AP70T03GI_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Fast Switching Performance BVDSS 30V ▼ Single Drive Requirement RDS(ON) 9mΩ ▼ Full Isolation Package ID 60A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.0 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range -55 to 175 Operating Junction Temperature Range -55 to 175 Pulsed Drain Current1 195 Total Power Dissipation 37.5 W Parameter Rating AP70T03GI Continuous Drain Current, VGS @ 10V 200805051 RoHS-compliant Product Drain-Source Voltage 30 Gate-Source Voltage ±20 Continuous Drain Current, V GS @ 10V G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=33A - - 9 mΩ VGS=4.5V, ID=20A - - 18 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=33A - 35 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS= ±20V - - ±100 nA Qg Total Gate Charge2 ID=33A - 17 27 nC Qgs Gate-Source Charge V DS=20V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 10 - nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time I D=33A - 105 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 22 - ns tf Fall Time R D=0.45Ω -9- ns Ciss Input Capacitance V GS=0V - 1485 2400 pF Coss Output Capacitance V DS=25V - 245 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=33A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=20A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP70T03GI

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 0.31 trr Qrr Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 0A T C =25 o C 120 160 200 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G =4.0V T C =25 o C 10V 8.0V 6.0V 100 120 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C V G =4.0V 10V 8.0V 6.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =33A 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.6 1.4 1.8 2.2 2.6 -50 0 50 100 150 200 T j ,Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 0.31 trr Qrr Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP70T03GI 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C rss C oss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 4 8 1 21 62 02 4 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =16V V DS =20V V DS =24V I D =3 3A

Package Outline : TO-220CFM Millimeters MIN NOM MAX A 4.50 4.70 4.90 A1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 E 9.70 10.00 10.40 L3 2.91 3.41 3.91 L4 14.70 15.40 16.10 φ ---- 3.20 ---- e ---- 2.54 ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220CFM SYMBOLS ADVANCED POWER ELECTRONICS CORP. Package Code70T03GI Part Number LOGO Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence YWWSSS LOGO A c E φ b e A c E φ b e meet Rohs requirement