AP6N2K0EN A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V ▼ Small Package Outline RDS(ON) 2Ω ▼ Surface Mount Device ID 3 450mA ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ mA ID@TA=70℃ mA IDM mA PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 180 ℃/W 0.7 -55 to 150 Thermal Data Parameter 201706151 Drain Current3, VGS @ 10V 450 Operating Junction Temperature Range -55 to 150 Drain Current3, VGS @ 10V 360 Pulsed Drain Current1 950 Storage Temperature Range Total Power Dissipation3 Drain-Source Voltage 60 Gate-Source Voltage + 20 Halogen-Free Product Parameter Rating G D S AP6N2K0E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S SOT-23S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=450mA - - 2 Ω VGS=4.5V, ID=200mA - - 4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=450mA - 0.85 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=450mA - 1.8 2.9 nC Qgs Gate-Source Charge V DS=30V - 0.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 0.3 - nC td(on) Turn-on Delay Time V DS=30V - 6 - ns tr Rise Time I D=450mA - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 2- ns tf Fall Time V GS=10V - 6 - ns Ciss Input Capacitance V GS=0V - 42 67.2 pF Coss Output Capacitance V DS=25V - 11 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 7 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=450mA, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 10sec ; 400℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP6N2K0EN

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T A =25 o C 0.2 0.4 0.6 0.8 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 1.15 1.25 1.35 1.45 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω) I D = 200m A T A =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =450mA V G =10V 0.2 0.4 0.6 0.8 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Normalized BVDSS v.s. Junction Fig 10. Total Power Dissipation Temperature Fig 11. Gate Charge Waveform Fig 12. Switching Time Waveform AP6N2K0EN Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =450mA V DS =30V 1 2 14 16 18 1 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = 1mA 200 400 600 800 1000 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(mW) td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge

Part Number : A23 A23SS Date Code : SS SS