AP6900GH-HF

AP6900GH-HF A-POWER | Alldatasheet

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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement CH-1 BV DSS 30V ▼ Fast Switching Performance RDS(ON) 6.2mΩ ▼ Two Independent Device ID 72A ▼ Halogen Free & RoHS Compliant Product CH-2 BV DSS 30V RDS(ON) 10mΩ Description ID 45A Absolute Maximum Ratings Symbol Rating Units Channel-2 VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TC=25℃ 45 A ID@TA=25℃ Continuous Drain Current3 14.1 A ID@TA=70℃ Continuous Drain Current3 11.2 A IDM Pulsed Drain Current1 60 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-c (CH-1) Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-c (CH-2) Maximum Thermal Resistance, Junction-case 4.0 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 42 ℃/W Data and specifications subject to change without notice 20090420pre Continuous Drain Current 72 Thermal Data Parameter AP6900GH-HF Preliminary Parameter Channel-1 + 20 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SDPAKTM S2 G2 D1 (TAB1) D2 (TAB2) SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 6.2 m Ω VGS=4.5V, ID=12A - - 12.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=18A - 32 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=18A - 10 16 nC Qgs Gate-Source Charge V DS=24V - 2.5 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.5 nC td(on) Turn-on Delay Time2 VDS=15V - 7 - ns tr Rise Time I D=18A - 60 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 18 - ns tf Fall Time R D=0.833Ω -5- ns Ciss Input Capacitance V GS=0V - 945 1510 pF Coss Output Capacitance V DS=25V - 295 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.3 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.5A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 27 - nC AP6900GH-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 10 m Ω VGS=4.5V, ID=8A - - 22 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=12A - 30 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=12A - 5.7 9.2 nC Qgs Gate-Source Charge V DS=24V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.2 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=12A - 56 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 14 - ns tf Fall Time R D=1.25Ω - 3.5 - ns Ciss Input Capacitance V GS=0V - 505 810 pF Coss Output Capacitance V DS=25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 2.6 4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.5A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 Is=10A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Rthja is determined with the device, mounted on 2oz FR4 board t ≦10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V GS =4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V GS =4.0V 2468 1 0 V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D =1 2A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 8A V G =10V 0.5 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 8A V DS =1 5 V V DS =1 8V V DS =24V 400 800 1200 1600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=75oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DCT A =25 o C Single Pulse td(on) tr td(off) tf VDS VGS 10% 90%

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V GS =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =8A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =12A V G =10V 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 02468 1 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 2 A V DS =1 5V V DS =1 8V V DS =2 4V 200 400 600 800 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM t T 0.020.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=75oC/W 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DCT A =25 o C Single Pulse td(on) tr td(off) tf VDS VGS 10% 90%