AP6800EY A-POWER | Alldatasheet

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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V ▼ Smaller Outline Package RDS(ON) 2Ω ▼ Surface mount package ID 3 260mA ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ Drain Current3, VGS @ 10V mA ID@TA=70℃ Drain Current3, VGS @ 10V mA IDM A PD@TA=25℃ mW TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 420 ℃/W Data and specifications subject to change without notice AP6800EY Halogen-Free Product Operating Junction Temperature Range -55 to 150 260 210 Pulsed Drain Current1 1 201511162 Total Power Dissipation3 300 Storage Temperature Range -55 to 150 Thermal Data Parameter Parameter Rating Drain-Source Voltage 60 Gate-Source Voltage + SOT-26 AP6800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is universally used for all commercial- industrial applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=200mA - - 2 Ω VGS=4.5V, ID=200mA - - 3.2 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance V DS=10V, ID=200mA - 0.7 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=1A - 0.9 1.4 nC Qgs Gate-Source Charge V DS=30V - 0.45 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 0.25 - nC td(on) Turn-on Delay Time V DS=30V - 6 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 2- ns tf Fall Time V GS=10V - 6 - ns Ciss Input Capacitance V GS=0V - 45 72 pF Coss Output Capacitance V DS=25V - 10 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 7 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=200mA, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP6800EY

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T A =25 o C 0.2 0.4 0.6 0.8 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω) I D = 200m A T A =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =200mA V G =10V 0.2 0.4 0.6 0.8 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Normalized BVDSS v.s. Junction Fig 10. Total Power Dissipation Temperature Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature AP6800EY 0 0.4 0.8 1.2 1.6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1A V DS =30V 1 2 14 16 18 1 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.2 0.4 0.6 0.8 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 160 240 320 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (mA) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = 1mA 160 240 320 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(mW)

Part Number : Z64 Z64SS Date Code : SS SS