AP6679GSP-HF A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID -75A ▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice Halogen-Free Product AP6679GS/P-HF Rating -30 +25 -75 Continuous Drain Current, VGS @ 10V -50 Pulsed Drain Current1 -300 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V3 Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 200904164 Maximum Thermal Resistance, Junction-ambient (PCB mount)4 -55 to 150 Thermal Data Parameter G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) G D S TO-220(P) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GP) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 9 m Ω VGS=-4.5V, ID=-24A - - 15 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-24A - 34 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA IGSS Gate-Source Leakage V GS= +25, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-16A - 42 67 nC Qgs Gate-Source Charge V DS=-24V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 25 - nC td(on) Turn-on Delay Time2 VDS=-15V - 11 - ns tr Rise Time I D=-16A - 35 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 58 - ns tf Fall Time R D=0.94Ω -7 8- ns Ciss Input Capacitance V GS=0V - 2870 4590 pF Coss Output Capacitance V DS=-25V - 960 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 740 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-24A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-16A, VGS=0V, - 47 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 43 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is -75A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -24A T C = 25 ℃ 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 4 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -8.0V -6.0V -4.5V V G =-3.0V 0.6 1.4 1.8 2.2 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -30A V G = -10V 100 150 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -8.0V -6.0V -4.5V V G =-3.0V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -16A V DS = -24V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse