AP6677GH A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -40V ▼ Simple Drive Requirement RDS(ON) 12.3mΩ ▼ Fast Switching Characteristic ID -60A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance Junction-case 1.8 ℃/W Rthj-a 62.5 ℃/W Data and specifications subject to change without notice Maximum Thermal Resistance, Junction-ambient (PCB mount)3 200901221 AP6677GH Rating -40 +20 -60 RoHS-compliant Product Continuous Drain Current, VGS @ 10V -38 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Pulsed Drain Current1 -240 Thermal Data -55 to 150 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 12.3 m Ω VGS=-4.5V, ID=-20A - - 18 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-30A - 46 - S IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-30A - 44 70 nC Qgs Gate-Source Charge V DS=-32V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 28 - nC td(on) Turn-on Delay Time2 VDS=-20V - 11 - ns tr Rise Time I D=-30A - 60 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 60 - ns tf Fall Time R D=0.67Ω - 120 - ns Ciss Input Capacitance V GS=0V - 3160 5050 pF Coss Output Capacitance V DS=-25V - 560 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-30A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-10A, VGS=0V, - 42 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 46 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0 V -6.0 V -5.0 V V G = - 4.0 V 100 120 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = - 4.0 V T C =150 o C 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -20 A T C =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-30A V G =-10V 0.4 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 1 02 03 04 05 06 07 08 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS =-32V I D =-30A 1000 2000 3000 4000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 Laser Marking SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code6677GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO Meet Rohs requirement for low voltage MOSFET only