AP6618GM-HF

AP6618GM-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 30mΩ ▼ Surface Mount Package ID 7A ▼ Halogen Free & RoHS Compliant Product

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃/W Data and specifications subject to change without notice Halogen-Free Product AP6618GM-HF 201004132 Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage + Continuous Drain Current3 7 Continuous Drain Current3 5.8 Pulsed Drain Current1 30 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Storage Temperature Range Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S S S G D D D D SO-8 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - 23.1 30 m Ω VGS=4.5V, ID=5A - 38.5 50 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 13 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=7A - 8.4 13 nC Qgs Gate-Source Charge V DS=24V - 2.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.7 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=1A - 5.2 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 18.8 - ns tf Fall Time R D=15Ω - 4.4 - ns Ciss Input Capacitance V GS=0V - 645 800 pF Coss Output Capacitance V DS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=7A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP6618GM-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02356 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 8.0V 6.0V 5.0V V G =4.5V 02356 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 8.0V 6.0V 5.0V V G =4.5V 0.2 0.8 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G =10V 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 ℃ 0.01 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7.0A V DS =16V V DS =20V VDS =24V 100 1000 1 7 13 19 25 31 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MH Ciss Coss Crss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON)