AP630GP A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Dynamic dv/dt Rating BVDSS 200V ▼ ▼ ▼ ▼ Repetitive Avalanche Rated RDS(ON) 400mΩ ▼ ▼ ▼ ▼ Fast Switching ID 9A ▼ ▼ ▼ ▼ Simple Drive Requirement

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS mJ IAR A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.7 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice AP630GP Parameter Rating Pb Free Plating Product 200Drain-Source Voltage Gate-Source Voltage 5.7 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 0.59 240 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 200219032 Parameter ± 30 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial- industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP630GP) is available for low-profil e applications. G D S TO-220 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 200 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.248 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=5A - - 400 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=5A - 40 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=160V, VGS=0V - - 100 uA IGSS Gate-Source Forward Leakage V GS=- - nA Qg Total Gate Charge3 ID= 9A - 25 - nC Qgs Gate-Source Charge V DS=160V - 3.6 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 14 - nC td(on) Turn-on Delay Time3 VDD=100V - 8 - ns tr Rise Time I D= 9A - 26 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 34 - ns tf Fall Time R D=11Ω -2 2- ns Ciss Input Capacitance V GS=0V - 515 - pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 9 A ISM Pulsed Source Current ( Body Diode )1 -- 3 6 A VSD Forward On Voltage3 Tj=25℃, IS=9A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25Ω , IAS=9A. 3.Pulse width <300us , duty cycle <2%. AP630GP ± 30V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =5A 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =7.0V V G =6.0V V G =5.0V V G =4.0V V G =8.0V V G =10V 02468 1 0 1 2 1 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =7.0V V G =6.0V V G =5.0V V G =4.0V V G =8.0V V G =10V 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized BVDSS (V)

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 0 50 100 150 Tc , Case Temperature ( o C) PD (W) 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 100 1 10 100 1000 V DS (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 10000 11 1 2 1 3 1 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 2.5 3.5 -50 0 50 100 150 T j Junction Temperayure ( o C) VGS(th) (V) 0.01 0.10 1.00 10.00 100.00 V SD (V) IS (A) T j =25 o C T j =150 o C 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9A V DS =80V V DS =120V V DS =160V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA