AP62T03GJ_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 12mΩ ▼ Fast Switching Characteristic ID 54A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy3 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice AP62T03GH/J Parameter Rating RoHS-compliant Product Drain-Source Voltage 30 Gate-Source Voltage + 20 Continuous Drain Current 54 Linear Derating Factor 0.31 Storage Temperature Range Continuous Drain Current 38 Pulsed Drain Current1 120 Total Power Dissipation 47 -55 to 175 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)4 200903124 Operating Junction Temperature Range -55 to 175 G D S TO-252(H) G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-251(J)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 12 m Ω VGS=4.5V, ID=15A - - 18 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=24V, VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=20A - 11.5 18 nC Qgs Gate-Source Charge V DS=20V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6.8 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=20A - 56 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 21.6 - ns tf Fall Time R D=0.75Ω -7- ns Ciss Input Capacitance V GS=0V - 750 1200 pF Coss Output Capacitance V DS=25V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 144 - pF Rg Gate Resistance f=1.0MHz - 2 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=20A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 21 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=20A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP62T03GH/J 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 120 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V 100 012345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 175o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1 5A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 25 100 175 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2 0A V G =10V 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =175 o C 0.4 0.6 0.8 1.2 1.4 -50 25 100 175 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP62T03GH/J Q VG 4.5V QGS QGD QG Charge 0 4 8 1 21 62 02 42 83 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =2 0 V V DS =2 5V I D =2 0A 100 1000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =175 o CT j =25 o C V DS =5V 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse