AP60T03GP_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low Gate Charge RDS(ON) 12mΩ ▼ Fast Switching Speed ID 45A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 200809253 Thermal Data Parameter Storage Temperature Range Total Power Dissipation 44 -55 to 175 Operating Junction Temperature Range -55 to 175 Linear Derating Factor 0.352 Continuous Drain Current, V GS @ 10V 32 Pulsed Drain Current1 120 Gate-Source Voltage + 20 Continuous Drain Current, VGS @ 10V 45 Parameter Rating Drain-Source Voltage 30 AP60T03GS/P RoHS-compliant Product G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GP) are available for low-profile applications. TO-263(S) TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 12 m Ω VGS=4.5V, ID=15A - - 25 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance2 VDS=10V, ID=10A - 25 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175oC) VDS=24V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS= +20V - - + 100 nA Qg Total Gate Charge2 ID=20A - 11.6 19 nC Qgs Gate-Source Charge V DS=24V - 3.9 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7 - nC td(on) Turn-on Delay Time2 VDS=15V - 8.8 - ns tr Rise Time I D=20A - 57.5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 18.5 - ns tf Fall Time R D=0.75Ω - 6.4 - ns Ciss Input Capacitance V GS=0V - 1135 1816 pF Coss Output Capacitance V DS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=20A, VGS=0V, - 23.3 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP60T03GS/P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 8.0V 6.0V 5.0V V G =4.0V 100 125 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 6.0V 5.0V V G =4.0V 0.4 0.8 1.2 1.6 -50 25 100 175 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =15A T C =25 ℃ 0.1 100 0 0.5 1 1.5 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C -50 25 100 175 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP60T03GS/P 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 6 12 18 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =16V V DS =20V V DS =24V 100 1000 10000 1 8 15 22 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 1ms 100ms DC 10ms 100us td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge T C =25 o C Single Pulse

Package Outline : TO-263 Millimeters MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 D 8.30 8.90 9.40 E 9.70 10.10 10.50 e 2.04 2.54 3.04 L3 4.50 4.90 5.30 L4 ----- 1.50 ---- θ 0° ----- 5° 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-263 ADVANCED POWER ELECTRONICS CORP. SYMBOLS Part Number b e A θ c YWWSSS LOGO Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Package Code 60T03GS E b e D A θ c meet Rohs requirement for low voltage MOSFET only

Package Outline : TO-220 Millimeters MIN NOM MAX A 4.40 4.60 4.80 b 0.76 0.88 1.00 D 8.60 8.80 9.00 c 0.36 0.43 0.50 E 9.80 10.10 10.40 L4 14.70 15.00 15.30 L5 6.20 6.40 6.60 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 L 13.25 13.75 14.25 e L1 2.60 2.75 2.89 φ 3.71 3.84 3.96 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220 2.54 REF.

7.4 REF,

ADVANCED POWER ELECTRONICS CORP. 5.10 REF. b e D A c L Package Code Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 60T03GP YWWSSS LOGO φ meet Rohs requirement E