AP60SL600AI A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 650V ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID 3,4 7A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V3,4 A ID@TC=100℃ Drain Current, VGS @ 10V3,4 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …400V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy5 mJ dv/dt Peak Diode Recovery dv/dt 6 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.8 ℃/W Rthj-a 65 ℃/W Data & specifications subject to change without notice 1.92 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient 36.7 201505191 Rating 600 +20 4.4 AP60SL600AI Parameter Halogen-Free Product G D S AP60SL600A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2A - - 0.6 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=10V, ID=2A - 5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=2A - 18 28.8 nC Qgs Gate-Source Charge V DS=480V - 4.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8 - nC td(on) Turn-on Delay Time V DD=300V - 7 - ns tr Rise Time I D=2A - 20 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 6- ns tf Fall Time V GS=10V - 22 - ns Ciss Input Capacitance V GS=0V - 630 1008 pF Coss Output Capacitance V DS=100V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF Rg Gate Resistance f=1.0MHz - 4.3 8.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2A, VGS=0V - 0.8 - V trr Reverse Recovery Time I S=7A, VGS=0V - 280 - ns Qrr Reverse Recovery Charge dI/dt=50A/µs - 1.8 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 5.Starting T j=25oC , VDD=50V , L=150mH , RG=25Ω 6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Ensure that the junction temperature does not exceed TJmax.. AP60SL600AI

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 1.6 2.4 3.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =2A V G =10V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V 0 4 8 1 21 62 02 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V 6.0V V G =5.0V V SD (V) IS (A) T j = 150 o CT j = 25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 480 500 520 540 560 580 600 56789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T C =25 o C

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Normalized BV DSS v.s. Junction Temperature 0.1 100 1000 10000 0 100 200 300 400 500 600 700 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =480V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC 0 50 100 150 T C , Case Temperature ( o C ) PD , Power Dissipation (W) Operation in this area limited by RDS(ON) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 60SL600A YWWSSS