AP60PN72REN A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 600V ▼ Small Package Outline RDS(ON) 72Ω ▼ ESD Diode Protected ID 53mA ▼ RoHS Compliant & Halogen-Free HBM ESD 2KV

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ Drain Current3, VGS @ 10V mA ID@TA=70℃ Drain Current3, VGS @ 10V mA IDM mA PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 250 ℃/W Data and specifications subject to change without notice AP60PN72REN 201601071 Halogen-Free Product 0.5 -55 to 150 Parameter Rating Drain-Source Voltage 600 Pulsed Drain Current1 300 Gate-Source Voltage + 20 Storage Temperature Range Total Power Dissipation Parameter Operating Junction Temperature Range -55 to 150 Thermal Data D G S SOT-23 G D S AP60PN72 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widel y preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion o r switch applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=50mA - - 72 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=10V, ID=50mA - 200 - mS IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge2 ID=0.1A - 2.5 4 nC Qgs Gate-Source Charge V DS=200V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 0.3 - nC td(on) Turn-on Delay Time2 VDS=300V - 10 - ns tr Rise Time I D=50mA - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 4- ns tf Fall Time V GS=10V - 77 - ns Ciss Input Capacitance V GS=0V - 50 80 pF Coss Output Capacitance V DS=100V - 9 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.05A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP60PN72REN 3.Mounted on min. copper pad FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =50mA V G =10V 0.0 0.2 0.4 0.6 0.8 1.0 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 100 150 200 250 300 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (mA) T A =2 5o C 10V 8.0V 7.0V V G = 6.0V 120 160 200 V DS , Drain-to-Source Voltage (V) ID , Drain Current (mA) T A = 150o C 10V 8.0V 7.0V 6.0V V G = 5.0V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =250uA I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Gate Charge Circuit Temperature 100 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 0.8 1.6 2.4 3.2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =0.1A V DS =200V Q VG 10V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 250℃/W t T 0.02 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (mA)

Part Number : A11 A11SS Date Code : SS SS