AP60N03S A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low On-Resistance BVDSS 30V ▼ ▼ ▼ ▼ Fast Switching RDS(ON) 13.5mΩ ▼ ▼ ▼ ▼ Simple Drive Requirement ID 55A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 62.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.5 Continuous Drain Current, VGS @ 10V 35 Pulsed Drain Current1 215 Gate-Source Voltage Continuous Drain Current, VGS @ 10V 55 Parameter Rating Drain-Source Voltage 30 200218032 AP60N03S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03P) is available for low-profile applications. ± 20 G D S TO-263 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=28A - 11.5 13.5 mΩ VGS=4.5V, ID=22A - 18 20 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=28A - 30 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Forward Leakage V GS=- - nA Qg Total Gate Charge2 ID=28A - 22.4 - nC Qgs Gate-Source Charge V DS=24V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 14 - nC td(on) Turn-on Delay Time2 VDS=15V - 7.4 - ns tr Rise Time I D=28A - 81 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 24 - ns tf Fall Time R D=0.53Ω -1 8- ns Ciss Input Capacitance V GS=0V - 950 - pF Coss Output Capacitance V DS=25V - 440 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 55 A ISM Pulsed Source Current ( Body Diode )1 - - 215 A VSD Forward On Voltage2 Tj=25℃, IS=55A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60N03S ± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP60N03S 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =28A 3456789 1 0 1 1 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =2 8A T C =25 o C 100 150 200 012345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =10V V G =8.0V V G =6.0V V G =4.0V 100 150 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V V G =6.0V V G =8.0V V G =10V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP60N03S 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0 50 100 150 T c , Case Temperature ( o C) PD (W) 100 1000 1 10 100 V DS (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP60N03S -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) 0.01 0.1 100 V SD (V) IS (A) T j =25 o C T j =150 o C 0 5 10 15 20 25 30 35 40 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =24V V DS =20V V DS =16V I D =28A 100 1000 10000 1 5 9 13 17 21 25 29 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA