AP55T10GH-HF

AP55T10GH-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 100V ▼ Lower Gate Charge RDS(ON) 16.5mΩ ▼ Fast Switching Characteristic ID 56A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a 62.5 ℃/W Data and specifications subject to change without notice AP55T10GH-HF Halogen-Free Product Parameter Rating Drain-Source Voltage 100 Gate-Source Voltage + 20 Continuous Drain Current, VGS @ 10V 56 Storage Temperature Range Continuous Drain Current, VGS @ 10V 40 Pulsed Drain Current1 160 Total Power Dissipation 125 -55 to 175 Total Power Dissipation 2 Operating Junction Temperature Range -55 to 175 201103092 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 16.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=10V, ID=40A - 55 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=40A - 63 100 nC Qgs Gate-Source Charge V DS=80V - 23 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 30 - nC td(on) Turn-on Delay Time2 VDS=50V - 20 - ns tr Rise Time I D=10A - 35 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 0- ns tf Fall Time V GS=10V - 15 - ns Ciss Input Capacitance V GS=0V - 3300 5280 pF Coss Output Capacitance V DS=25V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 190 - pF Rg Gate Resistance f=1.0MHz - 1 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=10A, VGS=0V - 70 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 220 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP55T10GH-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 048 1 2 1 6 2 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 9.0V 8.0V 7.0V V G = 6.0V 100 120 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V V G = 6.0V T C = 175o C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 T j ,Junction Temperature ( o C) Normalized VGS(th) (V) I D =250uA 0.8 0.9 1.1 1.2 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized BVDSS (V) I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 40A V DS =80V td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 1000 2000 3000 4000 5000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON)