AP55T06GI-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V ▼ Lower On-resistance RDS(ON) 18mΩ ▼ RoHS Compliant & Halogen-Free ID 29A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 201202151 AP55T06GI-HF -55 to 150 Halogen-Free Product -55 to 150 Parameter Rating Drain-Source Voltage 60 Gate-Source Voltage + Continuous Drain Current, VGS@10V 29 Pulsed Drain Current1 120 Total Power Dissipation 1.92 Thermal Data Parameter Storage Temperature Range Total Power Dissipation 31.3 Operating Junction Temperature Range Continuous Drain Current, VGS@10V G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications. G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 18 m Ω VGS=4.5V, ID=12A - - 30 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=18A - 24 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=18A - 16 25.6 nC Qgs Gate-Source Charge V DS=48V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 10.5 - nC td(on) Turn-on Delay Time V DS=30V - 9 - ns tr Rise Time I D=18A - 25 - ns td(off) Turn-off Delay Time R G=1Ω -2 2- ns tf Fall Time V GS=10V - 6 - ns Ciss Input Capacitance V GS=0V - 1200 1920 pF Coss Output Capacitance V DS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 1.7 3.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=18A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=10A, VGS=0V - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP55T06GI-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 120 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 7.0V 6.0V 5.0V V GS =4.0V 100 048 1 2 1 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 6.0V 5.0V V GS =4.0V 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T C =25 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Maximum Continuous Drain Current Fig 12. Transfer Characteristics v.s. Case Temperature 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =80V 400 800 1200 1600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -40 o C