AP5521GM-HF

AP5521GM-HF_14 A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 100V ▼ Low Gate Charge RDS(ON) 150mΩ ▼ Fast Switching Performance ID 2.5A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -100V RDS(ON) 160mΩ Description ID -2.5A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ Continuous Drain Current3 2.5 -2.5 A ID@TA=70℃ Continuous Drain Current3 2.0 -2.0 A IDM Pulsed Drain Current1 10 -10 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 201009241 Parameter Thermal Data AP5521GM-HF Halogen-Free Product S1 G1 SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 100 - - V VGS=10V, ID=2A - 120 150 m Ω VGS=5V, ID=1A - 145 250 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 1.4 3 V gfs Forward Transconductance V DS=10V, ID=2A - 3.3 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=2A - 6 10 nC Qgs Gate-Source Charge V DS=50V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3 - nC td(on) Turn-on Delay Time2 VDS=50V - 4.5 - ns tr Rise Time I D=1A - 6.5 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 6- ns tf Fall Time V GS=10V - 5.5 - ns Ciss Input Capacitance V GS=0V - 420 670 pF Coss Output Capacitance V DS=15V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.5A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=2A, VGS=0V - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 50 - nC AP5521GM-HF RDS(ON) Static Drain-Source On-Resistance2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -100 - - V VGS=-10V, ID=-2A - 125 160 m Ω VGS=-5V, ID=-1A - 145 250 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 -2 -3 V gfs Forward Transconductance V DS=-10V, ID=-2A - 8 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-2A - 14 22.5 nC Qgs Gate-Source Charge V DS=-50V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 7 - nC td(on) Turn-on Delay Time2 VDS=-50V - 10 - ns tr Rise Time I D=-1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω -5 0- ns tf Fall Time V GS=-10V - 21 - ns Ciss Input Capacitance V GS=0V - 1400 2240 pF Coss Output Capacitance V DS=-15V - 135 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.5A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-2A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 80 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. RDS(ON) Static Drain-Source On-Resistance2

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 ℃ 10V 7.0V 6.0V 5.0V V G = 4.0V 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 ℃ 10V 7.0V 6.0V 5.0V V G =4.0V 100 120 140 160 180 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 1A T A = 25 o C 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =5 0V 100 200 300 400 500 600 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -8.0V -7.0V -6.0V V G = - 5.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150 o C -10V -8.0V -7.0V -6.0V V G = - 5.0V 120 130 140 150 160 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -1 A T A =25 o C 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2 A V G = - 10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -2A V DS = -50V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)